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| STGB20NB32LZ STGB20NB32LZ-1 N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESHTM IGBT TYPE STGB20NB32LZ STGB20NB32LZ-1 s s s s s VCES CLAMPED CLAMPED VCE(sat) < 2.0 V < 2.0 V IC 20 A 20 A 3 1 3 12 POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE D 2PAK I2PAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s ELECTRONIC IGNITION FOR AUTOMOTIVE ORDERING INFORMATION SALES TYPE STGB20NB32LZT4 STGB20NB32LZ-1 MARKING GB20NB32LZ GB20NB32LZ PACKAGE D2PAK I2PAK PACKAGING TAPE & REEL TUBE December 2003 1/11 STGB20NB32LZ - STGB20NB32LZ-1 ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) Eas Ptot ESD Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at Tc = 25C Collector Current (continuous) at Tc = 100C Collector Current (pulsed) Single Pulse Energy Tc = 25C Total Dissipation at Tc = 25C Derating Factor ESD (Human Body Model) Storage Temperature Max. Operating Junction Temperature Value CLAMPED 20 CLAMPED 40 30 80 700 150 1 4 -65 to 175 175 Unit V V V A A A mJ W W/C KV C C (*)Pulse width limited by safe operating area THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1 62.5 C/W C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol BV(CES) Parameter Clamped Voltage Test Conditions IC = 2 mA, VGE = 0, Tc= - 40C IC = 2 mA, VGE = 0, Tc= 25C IC = 2 mA, VGE = 0, Tc= 150C BV(ECR) BVGE ICES IGES RGE Emitter Collector Break-down Voltage Gate Emitter Break-down Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Emitter Resistance IC = 75 mA, Tc = 25C IG = 2 mA VCE = 15 V, VGE =0 ,TC =150 C VCE =200 V, VGE=0 ,TC =150C VGE = 10V , VCE = 0 400 10 660 15 Min. 330 325 320 20 12 Typ. 355 350 345 28 14 16 10 100 1000 25 Max. 380 375 370 Unit V V V V V A A A K ON (1) Symbol VGE(th) Parameter Gate Threshold Voltage Test Conditions VCE = VGE, IC = 250A, Tc=-40C VCE = VGE, IC = 250A, Tc= 25C VCE =VGE, IC = 250A, Tc=150C VCE(SAT) Collector-Emitter Saturation Voltage VGE =4.5V, IC = 10 A, Tc= 25C VGE =4.5V, IC = 10 A, Tc= 150C VGE =4.5V, IC = 20 A, Tc= 25C VGE =4.5V, IC = 20 A, Tc= 150C Min. 1.2 1 0.6 1.1 1 1.35 1.25 1.8 1.7 2 2 1.4 2 Typ. Max. Unit V V V V V V V 2/11 STGB20NB32LZ - STGB20NB32LZ-1 ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) DYNAMIC Symbol gfs Cies Coes Cres Qg Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge VCE = 280 V, IC = 20 A, VGE = 5 V Test Conditions VCE = 25 V , IC =20 A VCE = 25 V, f = 1 MHz, VGE = 0 Min. Typ. 35 2300 165 28 51 Max. Unit S pF pF pF nC FUNCTIONAL CHARACTERISTICS Symbol II U.I.S. Parameter Latching Current Functional Test Open Secondary Coil Test Conditions RGOFF =127, VClamp = 250 V, VGE = 5 V, TC = 125 C RGOFF =1K ,Tc=125C, VG = 5 V, L = 1.6mH Min. 34 21.6 Typ. Max. Unit A A SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 250 V, IC = 20 A RG = 1K , VGE = 4.5 V VCC= 250 V, IC = 20 A RG=1K, VGE = 4.5 V VCC= 250 V, IC = 20 A, Tc=25C RG=1K, VGE = 4.5 V, Tc=150C Min. Typ. 2.3 0.6 550 8.8 9.2 Max. Unit s s A/s mJ mJ SWITCHING OFF Symbol tc tr(Voff) tf td(off) Eoff(**) tc tr(Voff) tf td(off) Eoff(**) Parameter Cross-Over Time Off Voltage Rise Time Fall Time Off Voltage Delay Time Turn-off Switching Loss Cross-Over Time Off Voltage Rise Time Fall Time Off Voltage Delay Time Turn-off Switching Loss Vcc = 250 V, IC = 20 A, RGE = 1 K , VGE = 4.5 V Tc = 150 C Test Conditions Vcc = 250 V, IC = 20 A, RGE = 1 K , VGE = 4.5 V Min. Typ. 4.8 2.6 2 11.5 11.8 7.8 3.5 3.9 12 17.8 Max. Unit s s s s mJ s s s s mJ (**)Losses Include Also the Tail (jedec Standardization) 3/11 STGB20NB32LZ - STGB20NB32LZ-1 Output Characteristics Transfer Characteristics Normalized Gate Threshold Voltage vs Temp. Transconductance Collector-Emitter On Voltage vs Temperature Capacitance Variations 4/11 STGB20NB32LZ - STGB20NB32LZ-1 Gate Charge vs Gate-Emitter Voltage Normalized BreakDown Voltage vs Temperature Break-Down Voltage vs Emitter Resistance BVGEO (Zener Gate-Emitter) vs Temperature Self Clamped Inductive Switching Energy vs Open Secondary Coil dV/dt Gate-Emitter Resistance 5/11 STGB20NB32LZ - STGB20NB32LZ-1 BVEC Reverse Battery Voltage Thermal Impedance Switching Off Safe Operating Area 6/11 STGB20NB32LZ - STGB20NB32LZ-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4: Gate Charge test Circuit 7/11 STGB20NB32LZ - STGB20NB32LZ-1 D2PAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 8/11 3 1 STGB20NB32LZ - STGB20NB32LZ-1 TO-262 (I2PAK) MECHANICAL DATA mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch 9/11 STGB20NB32LZ - STGB20NB32LZ-1 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W 10/11 BASE QTY 1000 mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 * on sales type STGB20NB32LZ - STGB20NB32LZ-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 11/11 |
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